Integrated chip with a gate structure over a recess

ABSTRACT

The present disclosure relates to an integrated chip comprising a substrate having a first top surface disposed at a first height, a second top surface disposed at a second height that is less than the first height, and a connecting surface extending from the first top surface to the second top surface. A first source/drain region is disposed along the first top surface of the substrate. A second source/drain region is disposed along the second top surface of the substrate and is laterally separated from the first source/drain region by a channel region of the substrate. A gate structure is arranged between the first source/drain region and the second source/drain region. The gate structure extends from over the first top surface of the substrate to over the connecting surface of the substrate. The gate structure also extends below the first top surface of the substrate.

BACKGROUND

Flash memory is an electronic non-volatile computer storage medium thatcan be electrically erased and reprogrammed quickly. It is used in awide variety of electronic devices and equipment. Common types of flashmemory cells include stacked gate memory cells and split gate memorycells. Compared to stacked gate memory cells, split gate memory cellshave higher injection efficiency, less susceptibility to short channeleffects, and better over erase immunity.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1A illustrates a cross-sectional view of some embodiments of anintegrated chip comprising a gate structure that extends over a recessin a substrate.

FIG. 1B illustrates a cross-sectional view of some alternativeembodiments of an integrated chip comprising a gate structure thatextends over a recess in a substrate.

FIG. 2A illustrates a cross-sectional view of some embodiments of anintegrated chip comprising a first gate structure and a second gatestructure that extend over a common recess in a substrate.

FIG. 2B illustrates a cross-sectional view of some embodiments of anintegrated chip comprising a first gate structure and a second gatestructure that extend over a first recess and a second recess in asubstrate, respectively.

FIGS. 3-18 illustrate cross-sectional views of some embodiments of amethod for forming an integrated chip comprising gates that are arrangedover a common recess in a substrate.

FIGS. 19-33 illustrate cross-sectional views of some embodiments of amethod for forming an integrated chip comprising gates that are arrangedover a first recess and a second recess in a substrate.

FIG. 34 illustrates a flow diagram of some embodiments of a method forforming an integrated chip comprising a gate structure that is arrangedover a recess in a substrate.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Many integrated chips include memory cells disposed along a substrate.For example, an integrated chip may comprise a split-gate flash memorycell disposed along a substrate. The memory cell includes a firstsource/drain region and a second source/drain region that are disposedalong a horizontal top surface of a substrate and that are laterallyseparated from each other by a channel region of the substrate. A gatestructure is disposed over the top surface of the substrate and isarranged between the first source/drain region and the secondsource/drain region. The gate structure includes a select gate (SG) anda memory gate (MG) that is laterally adjacent to the SG. The SG isvertically separated from the channel region by a SG dielectric layerand the MG is vertically separated from the channel region by a chargetrapping dielectric structure. A length of the channel region isproportional to a length of the top surface of the substrate thatextends between the first and second source/drain regions.

A challenge with the integrated chip is that a cell density of theintegrated chip may not be increased without diminishing a performanceof the memory cell. For example, because the length of the channelregion is proportionate to the length of the top surface of thesubstrate that extends between the first and second source/drainregions, reducing the length of the top surface of the substrate thatextends between the first and second source/drain regions would requirereducing the length of the channel region. However, reducing the lengthof the channel region may negatively affect the performance of thememory cell. For example, memory cells with very short channel lengthsmay experience performance issues that are sometimes referred to as“short channel effects.” Thus, the cell density of the integrated chipmay not be increased without diminishing a performance of the memorycell.

Various embodiments of the present disclosure are related to anintegrated chip including a memory cell that comprises a gate structuredisposed over a recess in a substrate to increase a cell density of theintegrated chip. The substrate has a first top surface disposed at afirst height, a second top surface disposed at a second height that isless than the first height, and a connecting surface extending from thefirst top surface to the second top surface. The second top surface andthe connecting surface define, at least in part, the recess in thesubstrate. A first source/drain region is disposed along the first topsurface of the substrate. A second source/drain region is disposed alongthe second top surface of the substrate and is laterally separated fromthe first source/drain region by a channel region of the substrate. Thegate structure is arranged over the substrate and between the firstsource/drain region and the second source/drain region. The gatestructure extends from over the first top surface of the substrate toover the connecting surface of the substrate. The channel region extendsalong the gate structure from the first source/drain region to thesecond source/drain region. For example, the channel region extendslaterally along the first top surface of the substrate and bothvertically and laterally along the connecting surface.

Because the channel region extends laterally along the first top surfaceof the substrate and further extends both laterally and vertically alongthe connecting surface of the substrate, a lateral distance between thefirst source/drain region and the second source/drain region may bereduced while a length of the channel region may be maintained. Forexample, because a portion of the channel region extends verticallyalong the connecting surface of the substrate, that portion of thechannel region may add length to the channel without adding to thelateral distance that is between the first source/drain region and thesecond source/drain region. In other words, the length of the channelregion may be greater than the lateral distance between the firstsource/drain region and the second source/drain region. As a result, theintegrated chip may include more memory cells in a given lateraldistance along substrate without decreasing the lengths of the channelregions of the memory cells (i.e., a cell density of the integrated chipmay be increased without diminishing a performance of the memory cells).

FIG. 1A illustrates a cross-sectional view 100 of some embodiments of anintegrated chip comprising a gate structure 110 that extends over arecess 106 in a substrate 102.

The integrated chip includes a memory cell 101 along the substrate 102.The substrate 102 has a first top surface 102 a disposed at a firstheight 102 ah, a second top surface 102 b disposed at a second height102 bh that is less than the first height 102 ah, and a connectingsurface 102 c extending from the first top surface 102 a to the secondtop surface 102 b. The second top surface 102 b and the connectingsurface 102 c define, at least in part, the recess 106 in the substrate102.

The memory cell 101 comprises a first source/drain region 104 a and asecond source/drain region 104 b. The first source/drain region 104 a isdisposed along the first top surface 102 a of the substrate 102. Thesecond source/drain region 104 b is disposed along the second topsurface 102 b of the substrate 102 and is laterally separated from thefirst source/drain region 104 a by a first lateral distance 104 w. Insome embodiments, the first source/drain region 104 a is separated fromthe second source/drain region 104 b by a channel region 108.

The gate structure 110 is arranged over the substrate 102 and betweenthe first source/drain region 104 a and the second source/drain region104 b. The gate structure 110 extends from over the first top surface102 a of the substrate 102 to over the connecting surface 102 c of thesubstrate 102. In some embodiments, the gate structure 110 furtherextends to over the second top surface 102 b of the substrate 102. Insome embodiments, the gate structure 110 extends below the first topsurface 102 a of the substrate 102.

The gate structure 110 comprises a first gate 112 a and a second gate112 b that is laterally adjacent to the first gate 112 a. The first gate112 a extends over the first top surface 102 a of the substrate 102. Afirst lower surface 113 a of the first gate 112 a is above the first topsurface 102 a of the substrate 102 and is vertically separated from thefirst top surface 102 a of the substrate 102 by a gate dielectric layer116. The second gate 112 b extends over the connecting surface 102 c ofthe substrate 102 and may further extend over the second top surface 102b of the substrate 102. A second lower surface 113 b of the second gate112 b extends below the first top surface 102 a of the substrate 102,extends along the connecting surface 102 c of the substrate 102, and isvertically separated from the connecting surface 102 c by a chargetrapping dielectric structure 114. In some embodiments, the chargetrapping dielectric structure 114 extends between the first gate 112 aand the second gate 112 b. For example, the charge trapping dielectricstructure 114 may extend along a sidewall of the first gate 112 a andalong an opposing sidewall of the second gate 112 b. In someembodiments, the charge trapping dielectric structure 114 may laterallyseparate the first gate 112 a from the second gate 112 b.

In some embodiments, a difference between the first height 102 ah andthe second height 102 bh (e.g., a depth of the recess 106) is greaterthan or equal to a width (not labeled) of the second gate 112 b.

The channel region 108 extends along the gate structure 110 from thefirst source/drain region 104 a to the second source/drain region 104 b.In some embodiments, the channel region 108 extends laterally along thefirst top surface 102 a of the substrate 102 and extends both verticallyand laterally along the connecting surface 102 c of the substrate 102.

Because the channel region 108 extends laterally along the first topsurface 102 a of the substrate 102 and extends both vertically andlaterally along the connecting surface 102 c of the substrate 102, alength (not labeled) of the channel region 108 is greater than the firstlateral distance 104 w between the first source/drain region 104 a andthe second source/drain region 104 b. In other words, the first lateraldistance 104 w between the first source/drain region 104 a and thesecond source/drain region 104 b may be reduced without reducing thelength (not labeled) of the channel region 108. Thus, a cell density ofthe integrated chip may be increased without diminishing a performanceof the memory cell 101.

In some embodiments, the integrated chip further comprises a firstinterlayer dielectric (ILD) layer 118 over the substrate 102, aplurality of contacts 120 extending through the first ILD layer 118, andan interconnect structure 122 over the plurality of contacts 120. Insome embodiments, the interconnect structure 122 may, for example,comprise one or more etch-stop layers 124, one or more second ILD layers126, one or more interconnect wires 128, one or more interconnect vias(not shown), or some other suitable features (e.g., bond pads, solderbumps, or the like).

Although the connecting surface 102 c of the substrate 102 isillustrated as being curved, it will be appreciated that in somealternative embodiments, the connecting surface 102 c may not be curved,and may meet the second top surface 102 b of the substrate 102 at acorner, as illustrated by dashed lines 102 d. Further, in suchembodiments, the overlying charge trapping dielectric structure 114 andoverlying second gate 112 b may also have surfaces that meet at acorner. In some other alternative embodiments, the connecting surface102 c may comprise a plurality of curved surfaces, a plurality ofcorners, or some other suitable features.

FIG. 1B illustrates a cross-sectional view 150 of some alternativeembodiments of an integrated chip comprising a gate structure 110 thatextends over a recess 106 in a substrate 102.

In such embodiments, a first gate 112 a extends over a connectingsurface 102 c of the substrate 102 and a second gate 112 b extends overa first top surface 102 a of the substrate 102. A second lower surface113 b of the second gate 112 b is above the first top surface 102 a ofthe substrate 102 and is vertically separated from the first top surface102 a of the substrate 102 by a charge trapping dielectric structure114. Further, a first lower surface 113 a of the first gate 112 aextends below the first top surface 102 a of the substrate 102, extendsalong the connecting surface 102 c of the substrate 102, and isvertically separated from the connecting surface 102 c by a gatedielectric layer 116. In some embodiments, the first gate 112 a mayfurther extend over a second top surface 102 b of the substrate 102.

Further, in some embodiments, the gate dielectric layer 116 extendsbetween the first gate 112 a and the second gate 112 b. For example, thegate dielectric layer 116 may extend along a sidewall of the first gate112 a and along an opposing sidewall of the second gate 112 b. In someembodiments, the gate dielectric layer 116 may laterally separate thefirst gate 112 a from the second gate 112 b.

In some embodiments, a difference between the first height 102 ah andthe second height 102 bh (e.g., a depth of the recess 106) is greaterthan or equal to a width (not labeled) of the first gate 112 a. Forexample, in some embodiments, the difference between the first height102 ah and the second height 102 bh (e.g., the depth of the recess 106)is in a range from about 5 nm to about 80 nm, from about 10 nm to about45 nm, from about 20 nm to about 40 nm, or some other suitable range. Insome embodiments, increasing the depth of the recess 106 may increasethe cell density of the integrated chip. For example, a recess depth ofabout 40 nm may correspond to about a 16% increase in cell density, anda recess depth of about 45 nm may correspond to about a 18% increase incell density.

In some embodiments, the width of the first gate 112 a and/or the widthof the second gate 112 b may, for example, be greater than or equal toabout 10 nm, may be about 10 nm to 45 nm, may be about 10 nm to 90 nm,or some other suitable value.

In some embodiments, a maximum depth of the recess 106 may depend on awidth of the gate that extends over the connecting surface 102 c (e.g.,the first gate 112 a in FIG. 1B and the second gate 112 b in FIG. 1A).In some embodiments, the maximum depth of the recess 106 may, forexample, be equal to the desired width of the gate that extends over theconnecting surface 102 c, minus 10 nm. In other words, in someembodiments, if the desired width of the gate that extends over theconnecting surface 102 c is about 90 nm, the maximum depth of the recess106 may be about 80 nm.

Although the connecting surface 102 c of the substrate 102 isillustrated as being curved, it will be appreciated that in somealternative embodiments, the connecting surface 102 c may not be curved,and may meet the second top surface 102 b of the substrate 102 at acorner, as illustrated by dashed lines 102 d. Further, in suchembodiments, the overlying gate dielectric layer 116 and the overlyingfirst gate 112 a may also have surfaces that meet at a corner.

In some embodiments, the substrate 102 may, for example, be or comprisesilicon, some III-V material, or some other suitable semiconductormaterial.

In some embodiments, the first source/drain region 104 a and the secondsource/drain region 104 b may, for example, be or comprise doped regionsof the substrate 102.

In some embodiments, the first gate 112 a and the second gate 112 b may,for example, be or comprise polysilicon, some metal, or some othersuitable material. Further, in some embodiments, the first gate 112 amay, for example, be a select gate (SG) and the second gate 112 b may,for example, be a memory gate (MG).

In some embodiments, the charge trapping dielectric structure 114 maycomprise one or more dielectric layers. Further, in some embodiments,the charge trapping dielectric structure 114 may be or comprise anoxide-nitride-oxide structure or some other suitable dielectricstructure. For example, in some embodiments, the charge trappingdielectric structure 114 may comprise a first dielectric layer, a seconddielectric layer over the first dielectric layer, and a third dielectriclayer over the second dielectric layer. In such embodiments, the firstdielectric layer and the third dielectric layer may comprise a firstdielectric material while the second dielectric layer may comprise asecond dielectric material different from the first dielectric material.

In some instances, the integrated chip illustrated in FIG. 1A and theintegrated chip illustrated in FIG. 1B may have similar performancecharacteristics. In some other instances, the integrated chipillustrated in FIG. 1B may exhibit more consistent performance, morepredictable performance, and/or better overall performancecharacteristics because the charge trapping dielectric structure 114 hasa more uniform shape (e.g., flat shape) in the integrated chipillustrated in FIG. 1B than in the integrated chip illustrated in FIG.1A. In some embodiments, the shape of the charge trapping dielectricstructure 114 may affect one or more operating current(s) of the memorycell 101.

FIG. 2A illustrates a cross-sectional view 200 of some embodiments of anintegrated chip comprising a first gate structure 210 a and a secondgate structure 210 b that extend over a common recess 206 in a substrate202.

The integrated chip includes a first memory cell 201 a and a secondmemory cell 201 b along the substrate 202. The substrate 202 has a firsttop surface 202 a and a third top surface 202 c that are disposed at afirst height 202 ah. The substrate 202 also has a second top surface 202b that is laterally between the first top surface 202 a and the thirdtop surface 202 c. The second top surface 202 b is disposed at a secondheight 202 bh that is less than the first height. The substrate 202 hasa first connecting surface 202 d that extends from the first top surface202 a to the second top surface 202 b, and has a second connectingsurface 202 e that extends from the third top surface 202 c to thesecond top surface 202 b. The second top surface 202 b, the firstconnecting surface 202 d, and the second connecting surface 202 edefine, at least in part, the common recess 206 in the substrate 202.

The first memory cell 201 a comprises a first individual source/drainregion 204 a that disposed along the first top surface of the substrate202. The second memory cell 201 b comprises a second individualsource/drain region 204 b that is disposed along the third top surface202 c of the substrate 202. Further, the first memory cell 201 a and thesecond memory cell 201 b share a common source/drain region 204 c thatis between the first and second individual source/drain regions 204 a,204 b and that is disposed along the second top surface 202 b of thesubstrate 202.

The first gate structure 210 a is arranged over the substrate 202 andbetween the first individual source/drain region 204 a and the commonsource/drain region 204 c. The first gate structure 210 a comprises afirst gate 212 a and a second gate 212 b that is adjacent to the firstgate 212 a. The first gate 212 a extends over the first top surface 202a of the substrate 202. A first lower surface (not labeled) of the firstgate 212 a is above the first top surface 202 a of the substrate 202 andis vertically separated from the first top surface 202 a of thesubstrate 202 by a gate dielectric layer 216. The second gate 212 bextends over the first connecting surface 202 d of the substrate 202 andmay further extend over the second top surface 202 b of the substrate202. A second lower surface (not labeled) of the second gate 212 bextends below the first top surface 202 a of the substrate 202, extendsalong the first connecting surface 202 d of the substrate 202, and isvertically separated from the first connecting surface 202 d by a chargetrapping dielectric structure 214.

The second gate structure 210 b is arranged over the substrate 202 andbetween the second individual source/drain region 204 b and the commonsource/drain region 204 c. The second gate structure 210 b comprises athird gate 212 c and a fourth gate 212 d that is adjacent to the thirdgate 212 c. The third gate 212 c extends over the third top surface 202c of the substrate 202 and the fourth gate 212 d extends over the secondconnecting surface 202 e of the substrate 202. A third lower surface(not labeled) of the third gate 212 c is above the third top surface 202c of the substrate 202 and is vertically separated from the third topsurface 202 c of the substrate 202 by the gate dielectric layer 216.Further, a fourth lower surface (not labeled) of the fourth gate 212 dextends below the third top surface 202 c of the substrate 202, extendsalong the second connecting surface 202 e of the substrate 202, and isvertically separated from the second connecting surface 202 e by thecharge trapping dielectric structure 214. In some embodiments, thefourth gate 212 d may further extend over a second top surface 202 b ofthe substrate 202.

In some embodiments, a horizontal plane (e.g., illustrated by dashedline 236) that is disposed at a third height (not labeled) that isbetween the first height 202 ah and the second height 202 bh intersectsboth the second gate 212 b and the fourth gate 212 d.

In some embodiments, the charge trapping dielectric structure 214extends between the first gate 212 a and the second gate 212 b, and alsoextends between the third gate 212 c and the fourth gate 212 d. In someembodiments, the charge trapping dielectric structure 214 may laterallyseparate the first gate 212 a from the second gate 212 b, and may alsolaterally separate the third gate 212 c from the fourth gate 212 d.

In some embodiments, the charge trapping dielectric structure 214comprises a tunneling layer 215 a, a charge trapping layer 215 b overthe tunneling layer 215 a, and a blocking layer 215 c over the chargetrapping layer 215 b. In some embodiments, the tunneling layer 215 a andthe blocking layer 215 c may comprise a first dielectric material (e.g.,silicon dioxide, aluminum oxide, or some other oxide) while the chargetrapping layer 215 b may comprise a second dielectric material (e.g.,silicon nitride, aluminum nitride, or some other nitride) different fromthe first dielectric material.

In some embodiments, a first channel region 208 a within the substrate202 extends along the first gate structure 210 a from the firstindividual source/drain region 204 a to the common source/drain region204 c. In some embodiments, a second channel region 208 b within thesubstrate 202 extends along the second gate structure 210 b from thesecond individual source/drain region 204 b to the common source/drainregion 204 c. In some embodiments, a first length (not labeled) of thefirst channel region 208 a is greater than a first lateral distance (notlabeled) between the first individual source/drain region 204 a and thecommon source/drain region 204 c. Further, in some embodiments, a secondlength (not labeled) of the second channel region 208 b is greater thana second lateral distance (not labeled) between the second individualsource/drain region 204 b and the common source/drain region 204 c.

In some embodiments, a first dielectric liner layer 230 extends betweenthe first gate 212 a and the second gate 212 b, and extends between thethird gate 212 c and the fourth gate 212 d. In some embodiments, thefirst dielectric liner layer 230 is on a sidewall of the charge trappingdielectric structure 214, on a sidewall of the gate dielectric layer216, and on a sidewall of the first gate 212 a.

In some embodiments, a second dielectric liner layer 232 is on the firsttop surface 202 a of the substrate 202, the second top surface 202 b ofthe substrate 202, and the third top surface 202 c of the substrate 202.In some embodiments, the second dielectric liner layer 232 extends overthe first individual source/drain region 204 a, over the secondindividual source/drain region 204 b, and the common source/drain region204 c. Further, in some embodiments, the second dielectric liner layer232 extends along a sidewall of the first gate 212 a, a sidewall of thesecond gate 212 b, a sidewall of the third gate 212 c, and a sidewall ofthe fourth gate 212 d.

FIG. 2B illustrates a cross-sectional view 250 of some embodiments of anintegrated chip comprising a first gate structure 210 a and a secondgate structure 210 b that extend over a first recess 206 a and a secondrecess 206 b in a substrate 102, respectively.

In such embodiments, the substrate 202 has a first top surface 202 a anda third top surface 202 c that are disposed at a first height 202 ah.The substrate 202 also has a second top surface 202 b that is laterallybetween the first top surface 202 a and the third top surface 202 c andthat is disposed at a second height 202 bh that is greater than thefirst height 202 ah. The first top surface 202 a and the firstconnecting surface 202 d define, at least in part, the first recess 206a in the substrate 202. The third top surface 202 c and the secondconnecting surface 202 e define, at least in part, the second recess 206b in the substrate 202.

The first gate structure 210 a comprises a first gate 212 a and a secondgate 212 b that is adjacent to the first gate 212 a. The first gate 212a extends over the first connecting surface 202 d of the substrate 202and may further extend over the first top surface 202 a of the substrate202. A first lower surface (not labeled) of the first gate 212 a extendsbelow the second top surface 202 b of the substrate 202, extends alongthe first connecting surface 202 d of the substrate 202, and isvertically separated from the first connecting surface 202 d by a gatedielectric layer 216. The second gate 212 b extends over the second topsurface 202 b of the substrate 202. A second lower surface (not labeled)of the second gate 212 b is above the second top surface 202 b of thesubstrate 202 and is vertically separated from the second top surface202 b of the substrate 202 by a charge trapping dielectric structure214.

The second gate structure 210 b comprises a third gate 212 c and afourth gate 212 d that is adjacent to the third gate 212 c. The fourthgate 212 d extends over the second top surface 202 b of the substrate202 and the third gate 212 c extends over the second connecting surface202 e of the substrate 202. In some embodiments, the third gate 212 cmay further extend over the third top surface 202 c of the substrate202. A third lower surface (not labeled) of the third gate 212 c extendsbelow the second top surface 202 b of the substrate 202, extends alongthe second connecting surface 202 e of the substrate 202, and isvertically separated from the second connecting surface 202 e by thegate dielectric layer 216. A fourth lower surface (not labeled) of thefourth gate 212 d is above the second top surface 202 b of the substrate202 and is vertically separated from the second top surface 202 b of thesubstrate 202 by the charge trapping dielectric structure 214.

In some embodiments, a horizontal plane (e.g., illustrated by dashedline 236) that is disposed at a third height (not labeled) that isbetween the first height 202 ah and the second height 202 bh intersectsboth the first gate 212 a and the third gate 212 c.

In some embodiments, the gate dielectric layer 216 extends between thefirst gate 212 a and the second gate 212 b, and further extends betweenthe third gate 212 c and the fourth gate 212 d. In some embodiments, thegate dielectric layer 216 may laterally separate the first gate 212 afrom the second gate 212 b, and may also laterally separate the thirdgate 212 c from the fourth gate 212 d. In some embodiments, the gatedielectric layer 216 is on the first top surface 202 a of the substrate202, the second top surface 202 b of the substrate 202, and the thirdtop surface 202 c of the substrate 202. In some embodiments, the gatedielectric layer 216 extends over the first individual source/drainregion 204 a, over the second individual source/drain region 204 b, andthe common source/drain region 204 c. In some embodiments, the gatedielectric layer 216 extends along a sidewall of the first gate 212 a, asidewall of the second gate 212 b, a sidewall of the third gate 212 c,and a sidewall of the fourth gate 212 d.

In some embodiments, a first dielectric liner layer 234 is on opposingsidewalls of the second gate 212 b and on opposing sidewalls of thefourth gate 212 d. In some embodiments, the first dielectric liner layer234 may further laterally separate the first gate 212 a from the secondgate 212 b and the third gate 212 c from the fourth gate 212 d.

In some embodiments, the first gate 212 a and the third gate 212 c may,for example, be select gates (SGs) while the second gate 212 b and thefourth gate 212 d may, for example, be memory gates (MGs).

FIGS. 3-18 illustrate cross-sectional views 300-1800 of some embodimentsof a method for forming an integrated chip comprising gates (e.g., 212b, 212 d) that are arranged over a common recess 206 in a substrate 202.Although FIGS. 3-18 are described in relation to a method, it will beappreciated that the structures disclosed in FIGS. 3-18 are not limitedto such a method, but instead may stand alone as structures independentof the method.

As shown in cross-sectional view 300 of FIG. 3, a gate dielectric layer216 is formed over a substrate 202 and a first gate layer 302 is formedover the gate dielectric layer 216. In some embodiments, the gatedielectric layer 216 may, for example, be formed by depositing silicondioxide, aluminum oxide, hafnium oxide, some other dielectric, or someother suitable material over the substrate 202 by a chemical vapordeposition (CVD) process, a physical vapor deposition (PVD) process, anatomic layer deposition (ALD) process, a spin on process, or some othersuitable process. In some embodiments, the first gate layer 302 may, forexample, be formed by depositing polysilicon or some other suitablematerial over the substrate 202 by a CVD process, a PVD process, an ALDprocess, or some other suitable process.

As shown in cross-sectional view 400 of FIG. 4, a first hard mask 402 isformed over the first gate layer (e.g., 302 of FIG. 3) and the firstgate layer is patterned according to the first hard mask 402 to define afirst gate 212 a and a third gate 212 c. The patterning also furtherdefines the gate dielectric layer 216. In some embodiments, the firsthard mask 402 may, for example, comprise silicon nitride, titaniumnitride, or some other suitable material. In some embodiments, thepatterning may comprise a dry etching process such as, for example, areactive ion etching (RIE) process, an ion beam etching (IBE) process,some other plasma etching process, or some other suitable dry etchingprocess.

As shown in cross-sectional view 500 of FIG. 5, a first dielectric linerlayer 230 is conformally formed over the substrate 202, over the firsthard mask 402, on sidewalls of the first gate 212 a, and on sidewalls ofthe third gate 212 c. In some embodiments, the first dielectric linerlayer 230 may, for example, be formed by depositing silicon dioxide,aluminum oxide, hafnium oxide, some other dielectric, or some othersuitable material over the substrate 202 by a CVD process, a PVDprocess, an ALD process, a spin on process, or some other suitableprocess.

As shown in cross-sectional view 600 of FIG. 6, a photoresist mask 602is formed over the substrate 202, over the first gate 212 a, and overthe third gate 212 c, and the substrate 202 is patterned according tothe photoresist mask 602 to form a common recess 206 in the substrate202 between the first gate 212 a and the third gate 212 c. The commonrecess 206 is disposed between a first top surface 202 a of thesubstrate 202 and a third top surface 202 c of the substrate 202.Further, the common recess 206 is defined by a second top surface 202 bof the substrate 202, a first connecting surface 202 d of the substrate202, and a second connecting surface 202 e of the substrate 202. In someembodiments, the patterning may comprise a dry etching process such as,for example, a RIE process, an IBE process, some other plasma etchingprocess, or some other suitable dry etching process.

As shown in cross-sectional view 700 of FIG. 7, a charge trappingdielectric structure 214 is conformally formed over first dielectricliner layer 230, along sidewalls of the first gate 212 a, alongsidewalls of the second gate 212 b, and over the common recess 206. Inparticular, the charge trapping dielectric structure 214 is formed overthe first top surface 202 a of the substrate 202, over the third topsurface 202 c of the substrate 202, on the first connecting surface 202d of the substrate 202, on the second connecting surface 202 e of thesubstrate 202, and on the second top surface 202 b of the substrate 202.

In some embodiments, the charge trapping dielectric structure 214 may,for example, be formed by depositing a tunneling layer (e.g., 215 a ofFIG. 2A) over the substrate 202, by depositing a charge trapping layer(e.g., 215 b of FIG. 2A) over the tunneling layer, and by depositing ablocking layer (e.g., 215 c of FIG. 2A) over the charge trapping layer.In some embodiments, the tunneling layer and/or the blocking layer may,for example, be formed by depositing silicon dioxide, aluminum oxide,hafnium oxide, some other dielectric, or some other suitable materialover the substrate 202 by a CVD process, a PVD process, an ALD process,a spin on process, or some other suitable process. In some embodiments,the charge trapping layer may, for example, be formed by depositingsilicon nitride, aluminum nitride, or some other suitable material overthe substrate 202 by a CVD process, a PVD process, an ALD process, aspin on process, or some other suitable process.

As shown in cross-sectional view 800 of FIG. 8, a second gate layer 802is formed over the charge trapping dielectric structure 214, and thesecond gate layer 802 is subsequently etched back such that a topsurface of the second gate layer 802 is below a top surface of thecharge trapping dielectric structure 214. In some embodiments, thesecond gate layer 802 may, for example, be formed by depositingpolysilicon or some other suitable material over the substrate 202 by aCVD process, a PVD process, an ALD process, or some other suitableprocess. In some embodiments, the etch back may, for example, comprise adry etching process or some other suitable process.

As shown in cross-sectional view 900 of FIG. 9, a second hard mask 904is formed over the second gate layer (e.g., 802 of FIG. 8) on opposingsides of the first gate 212 a and the third gate 212 c, and the secondgate layer is patterned according to the second hard mask 904 to definea second gate 212 b, a fourth gate 212 d, a first dummy gate 902 a, anda second dummy gate 902 b. The second hard mask 904 may, for example,comprise silicon nitride, titanium nitride, or some other suitablematerial. In some embodiments, the patterning may comprise a dry etchingprocess such as, for example, a RIE process, an IBE process, some otherplasma etching process, or some other suitable dry etching process.

As shown in cross-sectional view 1000 of FIG. 10, the first dummy gate(e.g., 902 a of FIG. 9) and the second dummy gate (e.g., 902 b of FIG.9) are removed. In some embodiments, removing the first dummy gate andthe second dummy gate comprises forming a photoresist mask 1002 over thefirst gate 212 a, the second gate 212 b, the third gate 212 c, and thefourth gate 212 d, and etching the first dummy gate and the second dummygate according to the photoresist mask 1002 to remove the first dummygate and the second dummy gate from over the charge trapping dielectricstructure 214. In some embodiments, the etching may comprise a dryetching process such as, for example, a RIE process, an IBE process,some other plasma etching process, or some other suitable dry etchingprocess.

As shown in cross-sectional view 1100 of FIG. 11, the charge trappingdielectric structure 214 and the first dielectric liner layer 230 arepatterned according to the first gate 212 a, the second gate 212 b, thethird gate 212 c, and the fourth gate 212 d. The patterning removes thecharge trapping dielectric structure 214 and the first dielectric linerlayer 230 from the first top surface 202 a of the substrate, from thethird top surface 202 c of the substrate 202, and from at least aportion of the second top surface 202 b of the substrate 202. In someembodiments, the patterning may comprise a dry etching process such as,for example, a RIE process, an IBE process, some other plasma etchingprocess, or some other suitable dry etching process.

As shown in cross-sectional view 1200 of FIG. 12, a second dielectricliner layer 232 is conformally formed on the first top surface 202 a ofthe substrate 202, on a sidewall of the first gate 212 a, on a sidewallof the second gate 212 b, on the second top surface 202 b of thesubstrate 202, on a sidewall of the fourth gate 212 d, on a sidewall ofthe third gate 212 c, and on the third top surface 202 c of thesubstrate 202. In some embodiments, the second dielectric liner layer232 may, for example, be formed by depositing silicon dioxide, aluminumoxide, hafnium oxide, some other dielectric, or some other suitablematerial over the substrate 202 by a CVD process, a PVD process, an ALDprocess, a spin on process, or some other suitable process.

As shown in cross-sectional view 1300 of FIG. 13, a first individualsource/drain region 204 a and a second individual source/drain region204 b are formed in the substrate 202 along the first top surface 202 aand the third top surface 202 c, respectively, and adjacent to the firstgate 212 a and the third gate 212 c, respectively. Further, a commonsource/drain region 204 c is formed in the substrate 202 along thesecond top surface 202 b of the substrate 202 and between the secondgate 212 b and the fourth gate 212 d.

In some embodiments, the first individual source/drain region 204 a, thesecond individual source/drain region 204 b, and the common source/drainregion 204 c may, for example, be formed by an ion implantation processor some other suitable process.

As shown in cross-sectional view 1400 of FIG. 14, the second dielectricliner layer 232, the first hard mask (e.g., 402 of FIG. 13), and thesecond hard mask (e.g., 904 of FIG. 13) are removed from over the firstgate 212 a, the second gate 212 b, the third gate 212 c, and the fourthgate 212 d. In some embodiments, the removal may, for example, comprisea dry etching process or some other suitable process. For example, insome embodiments, the removal may comprise forming a photoresist mask1402 over the substrate 202, and patterning the first hard mask and thesecond hard mask according to the photoresist mask 1402 to remove thesecond dielectric liner layer 232, the first hard mask, and the secondhard mask. In some other embodiments, the removal may comprise achemical mechanical planarization (CMP) process or some other suitableprocess.

As shown in cross-sectional view 1500 of FIG. 15, a first interlayerdielectric (ILD) layer 118 is formed over the substrate 202, the firstgate 212 a, the second gate 212 b, the third gate 212 c, and the fourthgate 212 d. In some embodiments, the first ILD layer 118 may, forexample, be formed by depositing silicon dioxide, silicon oxynitride,silicon oxycarbide, or some other suitable material over the substrate202 by a CVD process, a PVD process, an ALD process, a spin on process,or some other suitable process.

As shown in cross-sectional view 1600 of FIG. 16, a photoresist mask1602 is formed over the first ILD layer 118 and the first ILD layer 118is patterned according to the photoresist mask 1602 to form a pluralityof contact openings 1604 in the first ILD layer 118. In someembodiments, the plurality of contact openings 1604 extend through thefirst ILD layer 118 and through the second dielectric liner layer 232 tothe source/drain regions (e.g., 204 a, 204 b, 204 c). In someembodiments, the patterning may, for example, comprise a dry etchingprocess or some other suitable process.

As shown in cross-sectional view 1700 of FIG. 17, a plurality ofcontacts 120 are formed in the plurality of contact openings (e.g., 1604of FIG. 16). In some embodiments, the plurality of contacts 120 may, forexample, be formed by depositing a metal (e.g., tungsten, copper,cobalt, or the like) in the contact openings by a sputtering process, anelectrochemical deposition process, an electroless deposition process,or some other suitable process, and by subsequently planarizing themetal with a planarization process.

As shown in cross-sectional view 1800 of FIG. 18, an interconnectstructure 122 is formed over the plurality of contacts 120. In someembodiments, the interconnect structure 122 may, for example, be formedby depositing an etch-stop layer 124 over the first ILD layer 118,depositing a second ILD layer 126 over the etch-stop layer 124,patterning the second ILD layer 126 to form openings in the second ILDlayer 126, depositing a metal in the openings to form interconnect wires128 in the openings, and planarizing the metal.

FIGS. 19-33 illustrate cross-sectional views 1900-3300 of someembodiments of a method for forming an integrated chip comprising gates(e.g., 212 a, 212 c) that are arranged over a first recess 206 a and asecond recess 206 b in a substrate 202. Although FIGS. 19-33 aredescribed in relation to a method, it will be appreciated that thestructures disclosed in FIGS. 19-33 are not limited to such a method,but instead may stand alone as structures independent of the method.

As shown in cross-sectional view 1900 of FIG. 19, a charge trappingdielectric structure 214 is formed over a substrate 202 and a first gatelayer 1902 is formed over the charge trapping dielectric structure 214.In some embodiments, the charge trapping dielectric structure 214 may,for example, be formed by depositing a tunneling layer (e.g., 215 a ofFIG. 2B) over the substrate 202, by depositing a charge trapping layer(e.g., 215 b of FIG. 2B) over the tunneling layer, and by depositing ablocking layer (e.g., 215 c of FIG. 2B) over the charge trapping layer.

In some embodiments, the tunneling layer and/or the blocking layer may,for example, be formed by depositing silicon dioxide, aluminum oxide,hafnium oxide, some other dielectric, or some other suitable materialover the substrate 202 by a CVD process, a PVD process, an ALD process,a spin on process, or some other suitable process. In some embodiments,the charge trapping layer may, for example, be formed by depositingsilicon nitride, aluminum nitride, or some other suitable material overthe substrate 202 by a CVD process, a PVD process, an ALD process, aspin on process, or some other suitable process.

In some embodiments, the first gate layer 1902 may, for example, beformed by depositing any of polysilicon or some other suitable materialover the substrate 202 by a CVD process, a PVD process, an ALD process,or some other suitable process.

As shown in cross-sectional view 2000 of FIG. 20, a first hard mask 2002is formed over the first gate layer (e.g., 1902 of FIG. 19) and thefirst gate layer is patterned according to the first hard mask 2002 todefine a second gate 212 b and a fourth gate 212 d. In some embodiments,the first hard mask 2002 may, for example, comprise silicon nitride,titanium nitride, or some other suitable material. In some embodiments,the patterning may comprise a dry etching process such as, for example,a RIE process, an IBE process, some other plasma etching process, orsome other suitable dry etching process.

As shown in cross-sectional view 2100 of FIG. 21, a first dielectricliner layer 234 is conformally formed over the charge trappingdielectric structure 214, over the first hard mask 2002, on sidewalls ofthe second gate 212 b, and on sidewalls of the fourth gate 212 d. Insome embodiments, the first dielectric liner layer 234 may, for example,be formed by depositing silicon dioxide, aluminum oxide, hafnium oxide,some other dielectric, or some other suitable material over thesubstrate 202 by a CVD process, a PVD process, an ALD process, a spin onprocess, or some other suitable process.

As shown in cross-sectional view 2200 of FIG. 22, the first dielectricliner layer 234 and the charge trapping dielectric structure 214 arepatterned according to the second gate 212 b and the fourth gate 212 d.In some embodiments, the patterning removes the charge trappingdielectric structure 214 and the first dielectric liner layer 234 fromportions of the substrate 202 that are not covered by the second gate212 b nor the fourth gate 212 d. In some embodiments, the patterning maycomprise a dry etching process such as, for example, a RIE process, anIBE process, some other plasma etching process, or some other suitabledry etching process. In some embodiments, the patterning may remove thefirst dielectric liner layer 234 from over the first hard mask 2002.

As shown in cross-sectional view 2300 of FIG. 23, a photoresist mask2302 is formed over the substrate 202, over the second gate 212 b, andover the fourth gate 212 d, and the substrate 202 is patterned accordingto the photoresist mask 2302 to form a first recess 206 a in thesubstrate 202 adjacent to the second gate 212 b and to form a secondrecess 206 b in the substrate 202 adjacent to the fourth gate 212 d. Thefirst recess 206 a is defined by a first top surface 202 a of thesubstrate 202 and a first connecting surface 202 d of the substrate 202.The second recess 206 b is defined by a third top surface 202 c of thesubstrate 202 and a second connecting surface 202 e of the substrate202. A second top surface 202 b of the substrate 202 laterally extendsbetween the first connecting surface 202 d and the second connectingsurface 202 e. In some embodiments, the patterning may comprise a dryetching process such as, for example, a RIE process, an IBE process,some other plasma etching process, or some other suitable dry etchingprocess.

As shown in cross-sectional view 2400 of FIG. 24, a gate dielectriclayer 216 is conformally formed over the first recess 206 a, over thesecond recess 206 b, along sidewalls of the second gate 212 b, and alongsidewalls of the fourth gate 212 d. In particular, the gate dielectriclayer 216 is formed on the first top surface 202 a of the substrate 202,on the third top surface 202 c of the substrate 202, on the firstconnecting surface 202 d of the substrate 202, on the second connectingsurface 202 e of the substrate 202, and over the second top surface 202b of the substrate 202. In some embodiments, the gate dielectric layer216 may, for example, be formed by depositing silicon dioxide, aluminumoxide, hafnium oxide, some other dielectric, or some other suitablematerial over the substrate 202 by a CVD process, a PVD process, an ALDprocess, a spin on process, or some other suitable process.

As shown in cross-sectional view 2500 of FIG. 25, a second gate layer2502 is formed over the gate dielectric layer 216, and the second gatelayer 2502 is subsequently etched back such that a top surface of thesecond gate layer 2502 is below a top surface of the gate dielectriclayer 216. In some embodiments, the second gate layer 2502 may, forexample, be formed by depositing polysilicon or some other suitablematerial over the substrate 202 by a CVD process, a PVD process, an ALDprocess, or some other suitable process. In some embodiments, the etchback may, for example, comprise a dry etching process or some othersuitable process.

As shown in cross-sectional view 2600 of FIG. 26, a second hard mask2602 is formed over the second gate layer (e.g., 2502 of FIG. 25) onopposing sides of the second gate 212 b and the fourth gate 212 d, andthe second gate layer is patterned according to the second hard mask2602 to define a first gate 212 a, a third gate 212 c, a first dummygate 2604 a, and a second dummy gate 2604 b. The second hard mask 2602may, for example, comprise silicon nitride, titanium nitride, or someother suitable material. In some embodiments, the patterning maycomprise a dry etching process such as, for example, a RIE process, anIBE process, some other plasma etching process, or some other suitabledry etching process.

As shown in cross-sectional view 2700 of FIG. 27, the first dummy gate(e.g., 2604 a of FIG. 26) and the second dummy gate (e.g., 2604 b ofFIG. 26) are removed. In some embodiments, removing the first dummy gateand the second dummy gate comprises forming a photoresist mask 2702 overthe first gate 212 a, the second gate 212 b, the third gate 212 c, andthe fourth gate 212 d, and etching the first dummy gate and the seconddummy gate according to the photoresist mask 2702 to remove the firstdummy gate and the second dummy gate from over the gate dielectric layer216. In some embodiments, the etching may comprise a dry etching processsuch as, for example, a RIE process, an IBE process, some other plasmaetching process, or some other suitable dry etching process.

As shown in cross-sectional view 2800 of FIG. 28, a first individualsource/drain region 204 a and a second individual source/drain region204 b are formed in the substrate 202 along the first top surface 202 aand the third top surface 202 c, respectively, and adjacent to the firstgate 212 a and the third gate 212 c, respectively. Further, a commonsource/drain region 204 c is formed in the substrate 202 along thesecond top surface 202 b of the substrate 202 and between the secondgate 212 b and the fourth gate 212 d.

In some embodiments, the first individual source/drain region 204 a, thesecond individual source/drain region 204 b, and the common source/drainregion 204 c may, for example, be formed by an ion implantation processor some other suitable process.

As shown in cross-sectional view 2900 of FIG. 29, the gate dielectriclayer 216, the first hard mask (e.g., 2002 of FIG. 28), and the secondhard mask (e.g., 2602 of FIG. 28) are removed from over the first gate212 a, the second gate 212 b, the third gate 212 c, and the fourth gate212 d. In some embodiments, the removal may, for example, comprise a dryetching process or some other suitable process. For example, in someembodiments, the removal may comprise forming a photoresist mask 2902over the substrate 202, and patterning the first hard mask and thesecond hard mask according to the photoresist mask 2902 to remove thegate dielectric layer 216, the first hard mask, and the second hardmask. In some other embodiments, the removal may comprise a chemicalmechanical planarization (CMP) process or some other suitable process.

As shown in cross-sectional view 3000 of FIG. 30, a first interlayerdielectric (ILD) layer 118 is formed over the substrate 202, the firstgate 212 a, the second gate 212 b, the third gate 212 c, and the fourthgate 212 d. In some embodiments, the first ILD layer 118 may, forexample, be formed by depositing silicon dioxide, silicon oxynitride,silicon oxycarbide, or some other suitable material over the substrate202 by a CVD process, a PVD process, an ALD process, a spin on process,or some other suitable process.

As shown in cross-sectional view 3100 of FIG. 31, a photoresist mask3102 is formed over the first ILD layer 118 and the first ILD layer 118is patterned according to the photoresist mask 3102 to form a pluralityof contact openings 3104 in the first ILD layer 118. In someembodiments, the plurality of contact openings 3104 extend through thefirst ILD layer 118 and through the second dielectric liner layer 232 tothe source/drain regions (e.g., 204 a, 204 b, 204 c). In someembodiments, the patterning may, for example, comprise a dry etchingprocess or some other suitable process.

As shown in cross-sectional view 3200 of FIG. 32, a plurality ofcontacts 120 are formed in the plurality of contact openings (e.g., 3104of FIG. 31). In some embodiments, the plurality of contacts 120 may, forexample, be formed by depositing a metal (e.g., tungsten, copper,cobalt, or the like) in the contact openings by a sputtering process, anelectrochemical deposition process, an electroless deposition process,or some other suitable process, and by subsequently planarizing themetal with a planarization process.

As shown in cross-sectional view 3300 of FIG. 33, an interconnectstructure 122 is formed over the plurality of contacts 120. In someembodiments, the interconnect structure 122 may, for example, be formedby depositing an etch-stop layer 124 over the first ILD layer 118,depositing a second ILD layer 126 over the etch-stop layer 124,patterning the second ILD layer 126 to form openings in the second ILDlayer 126, depositing a metal in the openings to form interconnect wires128 in the openings, and planarizing the metal.

FIG. 34 illustrates a flow diagram of some embodiments of a method 3400for forming an integrated chip comprising a gate structure that isarranged over a recess in a substrate. While method 3400 is illustratedand described below as a series of acts or events, it will beappreciated that the illustrated ordering of such acts or events are notto be interpreted in a limiting sense. For example, some acts may occurin different orders and/or concurrently with other acts or events apartfrom those illustrated and/or described herein. In addition, not allillustrated acts may be required to implement one or more aspects orembodiments of the description herein. Further, one or more of the actsdepicted herein may be carried out in one or more separate acts and/orphases.

At 3402, a first dielectric layer is deposited on a first top surface ofa substrate. FIGS. 3 and 19 illustrate cross-sectional views 300 and1900, respectively, of some embodiments corresponding to act 3402.

At 3404, a first gate layer is deposited over the first dielectriclayer. FIGS. 3 and 19 illustrate cross-sectional views 300 and 1900,respectively, of some embodiments corresponding to act 3404.

At 3406, the first gate layer and the first dielectric layer arepatterned to define a first gate over the first top surface of thesubstrate. FIGS. 4, 20, and 22 illustrate cross-sectional views 400,2000, and 2200, respectively, of some embodiments corresponding to act3406.

At 3408, the substrate to is patterned form a recess in the substratethat is defined by a second top surface of the substrate and by aconnecting top surface of the substrate that extends from the first topsurface to the second top surface. FIGS. 6 and 23 illustratecross-sectional views 600 and 2300, respectively, of some embodimentscorresponding to act 3408.

At 3410, a second dielectric layer is deposited on the connectingsurface of the substrate. FIGS. 7 and 24 illustrate cross-sectionalviews 700 and 2400, respectively, of some embodiments corresponding toact 3410.

At 3412, a second gate layer is deposited over the second dielectriclayer. FIGS. 8 and 25 illustrate cross-sectional views 800 and 2500,respectively, of some embodiments corresponding to act 3412.

At 3414, the second gate layer is patterned to define a second gate overthe connecting surface of the substrate and adjacent to the first gate.FIGS. 9 and 26 illustrate cross-sectional views 900 and 2600,respectively, of some embodiments corresponding to act 3414.

At 3416, a first source/drain region is formed in the substrate alongthe first top surface of the substrate and adjacent to the first gate.FIGS. 13 and 29 illustrate cross-sectional views 1300 and 2900,respectively, of some embodiments corresponding to act 3416.

At 3418, a second source/drain region is formed in the substrate alongthe second top surface of the substrate and adjacent to the second gate.FIGS. 13 and 29 illustrate cross-sectional views 1300 and 2900,respectively, of some embodiments corresponding to act 3418.

At 3420, contacts are formed over the first and second source/drainregions. FIGS. 17 and 32 illustrate cross-sectional views 1700 and 3200,respectively, of some embodiments corresponding to act 3420.

At 3422, an interconnect structure is formed over the contacts. FIGS. 18and 33 illustrate cross-sectional views 1800 and 3300, respectively, ofsome embodiments corresponding to act 3422.

Thus, the present disclosure relates to an integrated chip including amemory cell that comprises a gate structure disposed over a recess in asubstrate to increase a cell density of the integrated chip.

Accordingly, in some embodiments, the present disclosure relates to anintegrated chip comprising a substrate having a first top surfacedisposed at a first height, a second top surface disposed at a secondheight that is less than the first height, and a connecting surfaceextending from the first top surface to the second top surface. A firstsource/drain region is disposed along the first top surface of thesubstrate. A second source/drain region is disposed along the second topsurface of the substrate and is laterally separated from the firstsource/drain region by a channel region of the substrate. A gatestructure is arranged between the first source/drain region and thesecond source/drain region. The gate structure extends from over thefirst top surface of the substrate to over the connecting surface of thesubstrate. The gate structure also extends below the first top surfaceof the substrate.

In other embodiments, the present disclosure relates to an integratedchip comprising a substrate having a first top surface and a third topsurface disposed at a first height, a second top surface laterallybetween the first and third top surfaces and disposed at a second heightthat is different than the first height, a first connecting surfaceextending from the first top surface to the second top surface, andsecond connecting surface extending from the third top surface to thesecond top surface. A first individual source/drain region is disposedalong the first top surface of the substrate. A second individualsource/drain region is disposed along the third top surface of thesubstrate. A common source/drain region is between the first and secondindividual source/drain regions and is disposed along the second topsurface of the substrate. A first gate is over the first connectingsurface and is between the first individual source/drain region and thecommon source/drain region. A second gate is adjacent to the first gateand is between the first individual source/drain region and the commonsource/drain region. A third gate is over the second connecting surfaceand is between the second individual source/drain region and the commonsource/drain region. A fourth gate is adjacent to the third gate and isbetween the second individual source/drain region and the commonsource/drain region. A horizontal plane that is disposed at a thirdheight that is between the first height and the second height intersectsboth the first gate and the third gate.

In yet other embodiments, the present disclosure relates to a method forforming an integrated chip. The method comprises depositing a first gatelayer over a first top surface of a substrate. The first gate layer ispatterned to define a first gate over the first top surface. Thesubstrate is patterned according to the first gate to form a firstrecess in the substrate that is adjacent to the first gate. The firstrecess is formed by both a second top surface of the substrate and aconnecting surface of the substrate. A first dielectric layer isdeposited on the connecting surface and the second top surface of thesubstrate. A second gate layer is deposited over the connecting surfaceand the second top surface of the substrate. The second gate layer ispatterned to form a second gate over the connecting surface and adjacentto the first gate.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method for forming an integrated chip, themethod comprising: depositing a first gate layer over a first topsurface of a substrate; patterning the first gate layer to define afirst gate over the first top surface; patterning the substrateaccording to the first gate to form a first recess in the substrate thatis adjacent to the first gate, wherein the first recess is formed byboth a second top surface of the substrate and a connecting surface ofthe substrate; depositing a first dielectric layer on the connectingsurface and the second top surface of the substrate; depositing a secondgate layer over the connecting surface and the second top surface of thesubstrate; patterning the second gate layer to form a second gate overthe connecting surface and adjacent to the first gate; and depositing asecond dielectric layer over the first top surface of the substratebefore depositing the first gate layer.
 2. The method of claim 1,further comprising: forming a first source/drain region in the substratealong the first top surface of the substrate and forming a secondsource/drain region in the substrate along the second top surface of thesubstrate after patterning the second gate layer.
 3. The method of claim1, wherein patterning the second gate layer removes the second gatelayer from over a portion of the first top surface of the substrate. 4.The method of claim 1, wherein the first dielectric layer extendsbetween the first gate and the second gate, and between the second gateand the substrate.
 5. The method of claim 1, wherein the second gateextends from above the first top surface to below the first top surface.6. The method of claim 1, wherein patterning the second gate layer formsa dummy gate over the first top surface and adjacent to the first gate,and wherein the method further comprises: removing the dummy gate fromover the substrate.
 7. The method of claim 1, further comprising:forming a dielectric liner layer over the substrate and along the firstgate after the patterning of the first gate layer and before thepatterning of the substrate.
 8. A method for forming an integrated chip,the method comprising: depositing a gate dielectric layer over asemiconductor substrate; depositing a first gate layer over the gatedielectric layer; patterning the first gate layer to form a first gateand a third gate over the semiconductor substrate; patterning thesemiconductor substrate to form a common recess in the semiconductorsubstrate and between the first gate and the third gate, wherein thesemiconductor substrate has a first top surface, a second top surface, athird top surface, a first connecting surface, and a second connectingsurface after the patterning of the semiconductor substrate, wherein thesecond top surface is between the first top surface and the third topsurface, wherein the first connecting surface extends from the first topsurface to the second top surface and the second connecting surfaceextends from the third top surface to the second top surface, whereinthe first gate is over the first top surface and the third gate is overthe third top surface, and wherein the common recess is formed by thesecond top surface, the first connecting surface, and the secondconnecting surface; forming a charge trapping dielectric structure alongthe second top surface, the first connecting surface, the secondconnecting surface, a sidewall of the first gate, and a sidewall of thethird gate; depositing a second gate layer over the charge trappingdielectric structure, the first top surface, the second top surface, thethird top surface, the first connecting surface, and the secondconnecting surface; and patterning the second gate layer to form asecond gate and a fourth gate over the common recess, wherein the secondgate is adjacent to the first gate and the fourth gate is adjacent tothe third gate.
 9. The method of claim 8, further comprising: patterningthe gate dielectric layer according to the first gate and the thirdgate; and patterning the charge trapping dielectric structure to delimita first portion and a second portion of the charge trapping dielectricstructure, wherein the first portion is separate from the secondportion, wherein the first portion extends along the sidewall of thefirst gate, a sidewall of the second gate, and the first connectingsurface, and wherein the second portion extends along the sidewall ofthe third gate, a sidewall of the fourth gate, and the second connectingsurface.
 10. The method of claim 9, wherein the patterning of the chargetrapping dielectric structure removes the charge trapping dielectricstructure from directly over the first top surface and the third topsurface, and further removes the charge trapping dielectric structurefrom over a portion of the second top surface.
 11. The method of claim8, wherein the second gate is over the first connecting surface andseparated from the first gate by a first portion of the charge trappingdielectric structure, and wherein the fourth gate is over the secondconnecting surface and separated from the third gate by a second portionof the charge trapping dielectric structure.
 12. The method of claim 8,wherein the patterning of the second gate layer further forms a firstdummy gate over the first top surface and adjacent to the first gate,and a second dummy gate over the third top surface and adjacent to thethird gate, and wherein the method further comprises: removing the firstdummy gate and the second dummy gate from over the semiconductorsubstrate.
 13. The method of claim 8, further comprising: forming adielectric liner layer along the first top surface, the first gate, thesecond gate, the second top surface, the third gate, the fourth gate,and the third top surface after the patterning of the second gate layer.14. The method of claim 8, further comprising: forming a dielectricliner layer along the semiconductor substrate, the first gate, the thirdgate, and the gate dielectric layer after the patterning of the firstgate layer and before the patterning of the semiconductor substrate. 15.The method of claim 8, wherein forming the charge trapping dielectricstructure comprises depositing a tunneling layer over the semiconductorsubstrate, depositing a charge trapping layer over the tunneling layer,and depositing a blocking layer over the charge trapping layer.
 16. Amethod for forming an integrated chip, the method comprising: forming acharge trapping dielectric structure over a semiconductor substrate;depositing a first gate layer over the charge trapping dielectricstructure; patterning the first gate layer to form a second gate and afourth gate over the semiconductor substrate; patterning thesemiconductor substrate to form a first recess in the semiconductorsubstrate and adjacent to the second gate, and to form a second recess,separate from the first recess, in the semiconductor substrate andadjacent to the fourth gate, wherein the semiconductor substrate has afirst top surface, a second top surface, a third top surface, a firstconnecting surface, and a second connecting surface after the patterningof the semiconductor substrate, wherein the second top surface isbetween the first top surface and the third top surface, wherein thefirst connecting surface extends from the first top surface to thesecond top surface and the second connecting surface extends from thethird top surface to the second top surface, wherein the second gate andthe fourth gate are over the second top surface, wherein the firstrecess is formed by the first top surface and the first connectingsurface, and wherein the second recess is formed by the third topsurface and the second connecting surface; depositing a gate dielectriclayer along the first top surface, the first connecting surface, asidewall of the second gate, the third top surface, the secondconnecting surface, and a sidewall of the fourth gate; depositing asecond gate layer over the gate dielectric layer, the first top surface,the second top surface, the third top surface, the first connectingsurface, and the second connecting surface; and patterning the secondgate layer to form a first gate over the first recess and a third gateover the second recess, wherein the first gate is adjacent to the secondgate and the third gate is adjacent to the fourth gate.
 17. The methodof claim 16, wherein the first gate is over the first connecting surfaceand separated from the second gate by a first portion of the gatedielectric layer, and wherein the third gate is over the secondconnecting surface and separated from the third gate by a second portionof the gate dielectric layer.
 18. The method of claim 16, furthercomprising: forming a dielectric liner layer along the charge trappingdielectric structure, the second gate, and the fourth gate after thepatterning of the first gate layer and before the patterning of thesemiconductor substrate.
 19. The method of claim 18, further comprising:patterning the charge trapping dielectric structure and the dielectricliner layer according to the second gate and the fourth gate before thepatterning of the semiconductor substrate.
 20. The method of claim 1,further comprising: depositing the first dielectric layer along asidewall of the first gate, wherein the second gate layer is depositeddirectly over the first dielectric layer and along a sidewall of thefirst dielectric layer.